| dc.contributor.author | Chung, Daniel Y. | en_US |
| dc.date.accessioned | 2013-03-07T20:31:19Z | |
| dc.date.available | 2013-03-07T20:31:19Z | |
| dc.date.issued | 1993 | en_US |
| dc.identifier | ocm00018170 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1993/17519 | |
| dc.description.abstract | | en_US |
| dc.format.extent | viii [i.e. ix], 115 leaves : | en_US |
| dc.language.iso | eng | en_US |
| dc.rights | | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.title | Analyses of the annealing processes and the effects of plasma treated substrate surfaces for MOS devices | en_US |
| dc.type | info:eu-repo/semantics/masterThesis | |
| dc.type | master thesis | en_US |
| dc.degree.discipline | Electrical and Computer Engineering | en_US |
| dc.degree.level | Master of Science (M.Sc.) | en_US |
