Analyses of the annealing processes and the effects of plasma treated substrate surfaces for MOS devices

dc.contributor.authorChung, Daniel Y.en_US
dc.date.accessioned2013-03-07T20:31:19Z
dc.date.available2013-03-07T20:31:19Z
dc.date.issued1993en_US
dc.degree.disciplineElectrical and Computer Engineeringen_US
dc.degree.levelMaster of Science (M.Sc.)en_US
dc.description.abstracten_US
dc.format.extentviii [i.e. ix], 115 leaves :en_US
dc.identifierocm00018170en_US
dc.identifier.urihttp://hdl.handle.net/1993/17519
dc.language.isoengen_US
dc.rightsopen accessen_US
dc.titleAnalyses of the annealing processes and the effects of plasma treated substrate surfaces for MOS devicesen_US
dc.typemaster thesisen_US
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