Investigation of the properties of plasma enhanced CVD silicon dioxide and its applications to VLSI technology

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dc.contributor.authorLi, Yong Qiangen_US
dc.date.accessioned2013-03-04T20:51:16Z
dc.date.available2013-03-04T20:51:16Z
dc.date.issued1989en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.levelMaster of Science (M.Sc.)en_US
dc.description.abstracten_US
dc.format.extentiii [i.e. xiv], 92 leaves :en_US
dc.identifierocm72753217en_US
dc.identifier.urihttp://hdl.handle.net/1993/16891
dc.language.isoengen_US
dc.rightsopen accessen_US
dc.titleInvestigation of the properties of plasma enhanced CVD silicon dioxide and its applications to VLSI technologyen_US
dc.typemaster thesisen_US
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