Characterization of electronically active defects in hafnium dioxide high-[kappa] gate dielectrics

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dc.contributor.authorFelnhofer, Danielen_US
dc.date.accessioned2013-05-07T21:13:19Z
dc.date.available2013-05-07T21:13:19Z
dc.date.issued2006en_US
dc.degree.disciplineElectrical and Computer Engineeringen_US
dc.degree.levelMaster of Science (M.Sc.)en_US
dc.description.abstracten_US
dc.format.extent9388116 bytesen_US
dc.identifierocm00059606en_US
dc.identifier.urihttp://hdl.handle.net/1993/20336
dc.language.isoengen_US
dc.rightsopen accessen_US
dc.titleCharacterization of electronically active defects in hafnium dioxide high-[kappa] gate dielectricsen_US
dc.typemaster thesisen_US
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