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dc.contributor.supervisorBuchanan, Douglas (Electrical and Computer Engineering)en
dc.contributor.authorMasood, Nusraat Fowjia
dc.date.accessioned2010-09-10T21:13:11Z
dc.date.available2010-09-10T21:13:11Z
dc.date.issued2010-09-10T21:13:11Z
dc.identifier.urihttp://hdl.handle.net/1993/4139
dc.description.abstractTo harness the wealth of success and computational power from the microelectronics industry, lab-on-a-chip (LOAC) applications should be fully integrated with silicon platforms. This works demonstrates a dielectrophoresis-based LOAC device built entirely on silicon using standard CMOS (complementary metal oxide semiconductor) processing techniques. The signal phases on multiple electrodes were controlled with only four electrical contacts, which connected to the device using three metal layers separated with interlayer dielectric. Indium tin oxide was deposited on a milled plastic lid to provide the conductivity and optical clarity necessary to electrically actuate the particles and observe them. The particles and medium were in the microfluidic chamber formed by using conductive glue to bond the plastic milled lid to the patterned silicon substrate. A correlation between the particle velocities and the electric field gradients was made using video microscopy and COMSOL Multiphysics ® simulations.en
dc.format.extent3496208 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectSiliconen
dc.subjectLab-on-a-Chipen
dc.subjectDielectrophoresisen
dc.titleSilicon Integration of “Lab-on-a-Chip” Dielectrophoresis Devicesen
dc.typeinfo:eu-repo/semantics/masterThesis
dc.typemaster thesisen_US
dc.degree.disciplineElectrical and Computer Engineeringen_US
dc.contributor.examiningcommitteeThomson, Douglas (Electrical and Computer Engineering) Lin, Francis (Physics and Astronomy)en
dc.degree.levelMaster of Science (M.Sc.)en_US
dc.description.noteOctober 2010en


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