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dc.contributor.supervisor Buchanan, Douglas (Electrical and Computer Engineering) en
dc.contributor.author Masood, Nusraat Fowjia
dc.date.accessioned 2010-09-10T21:13:11Z
dc.date.available 2010-09-10T21:13:11Z
dc.date.issued 2010-09-10T21:13:11Z
dc.identifier.uri http://hdl.handle.net/1993/4139
dc.description.abstract To harness the wealth of success and computational power from the microelectronics industry, lab-on-a-chip (LOAC) applications should be fully integrated with silicon platforms. This works demonstrates a dielectrophoresis-based LOAC device built entirely on silicon using standard CMOS (complementary metal oxide semiconductor) processing techniques. The signal phases on multiple electrodes were controlled with only four electrical contacts, which connected to the device using three metal layers separated with interlayer dielectric. Indium tin oxide was deposited on a milled plastic lid to provide the conductivity and optical clarity necessary to electrically actuate the particles and observe them. The particles and medium were in the microfluidic chamber formed by using conductive glue to bond the plastic milled lid to the patterned silicon substrate. A correlation between the particle velocities and the electric field gradients was made using video microscopy and COMSOL Multiphysics ® simulations. en
dc.format.extent 3496208 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.rights info:eu-repo/semantics/openAccess
dc.subject Silicon en
dc.subject Lab-on-a-Chip en
dc.subject Dielectrophoresis en
dc.title Silicon Integration of “Lab-on-a-Chip” Dielectrophoresis Devices en
dc.type info:eu-repo/semantics/masterThesis
dc.degree.discipline Electrical and Computer Engineering en
dc.contributor.examiningcommittee Thomson, Douglas (Electrical and Computer Engineering) Lin, Francis (Physics and Astronomy) en
dc.degree.level Master of Science (M.Sc.) en
dc.description.note October 2010 en


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