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dc.contributor.supervisorRajapakse, A. D.(Dept. of Elec. & Comp. Eng.)en_US
dc.contributor.authorNaushath, Mohamed
dc.date.accessioned2013-08-02T17:08:44Z
dc.date.available2013-08-02T17:08:44Z
dc.date.issued2013-08-02
dc.identifier.urihttp://hdl.handle.net/1993/22012
dc.description.abstractInsulated Gate Bipolar Transistor (IGBT) based voltage source converter (VSC) applica-tions embedded in power systems are growing. Optimal design of thermal management systems for such converters requires estimation of IGBT losses under various operating conditions, both normal and abnormal. Therefore, development of tools for estimating IGBT losses in EMT simulators is important as converters embedded in large power sys-tems are simulated in EMT simulators. Two circuit models are developed to simulate turn-on and turn-off transients using a be-havioral approach. These circuit models mimic the observed behavior in distinct phases of the turn-on and turn-off transients under the inductive load switching. In this model, the nonlinear nature of the circuit model of the IGBT is treated and converter specific in-fluential parameters are taken in to account. An excellent correlation between the meas-ured and simulated waveforms as well as measured and estimated switching losses is ob-served. Finally, an efficient method to incorporate switching loss calculation in an EMT program in the form of a lookup table created using the developed transient model is pro-posed.en_US
dc.language.isoengen_US
dc.rightsopen accessen_US
dc.subjectIGBT Switching Lossen_US
dc.subjectIGBT Switching Modelingen_US
dc.subjectIGBT Circuit Modelen_US
dc.subjectVSC Switching Loss Estimationen_US
dc.titleA Circuit Model for Switching Loss Estimation in Voltage Source Convertersen_US
dc.typemaster thesisen_US
dc.degree.disciplineElectrical and Computer Engineeringen_US
dc.contributor.examiningcommitteeFilizadeh, S. (Dept. of Elec. & Comp. Eng.) Zhang, Q. (Dept. of Biosystems) Gole, A. M. (Dept. of Elec. & Comp. Eng.)en_US
dc.degree.levelMaster of Science (M.Sc.)en_US
dc.description.noteOctober 2013en_US


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