The density of localized gap states in amorphous silicon-nitrogen alloy films prepared by glow discharge

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dc.contributor.authorWhite, James Fredericen_US
dc.date.accessioned2013-01-28T15:22:24Z
dc.date.available2013-01-28T15:22:24Z
dc.date.issued1986en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.levelMaster of Science (M.Sc.)en_US
dc.description.abstracten_US
dc.format.extentix, 76 leaves :en_US
dc.identifierocm72809799en_US
dc.identifier.urihttp://hdl.handle.net/1993/15496
dc.language.isoengen_US
dc.rightsopen accessen_US
dc.titleThe density of localized gap states in amorphous silicon-nitrogen alloy films prepared by glow dischargeen_US
dc.typemaster thesisen_US
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