Floating Gate Metal-Oxide-Semiconductor Based Gas Sensor
| dc.contributor.author | Tareq, Md. Obaej | |
| dc.contributor.examiningcommittee | Thomson, Douglas (Electrical and Computer Engineering) Freund, Michael S. (Chemistry) | en_US |
| dc.contributor.supervisor | Buchanan,Douglas A. (Electrical and Computer Engineering) | en_US |
| dc.date.accessioned | 2014-04-10T20:37:45Z | |
| dc.date.available | 2014-04-10T20:37:45Z | |
| dc.date.issued | 2014-04-10 | |
| dc.degree.discipline | Electrical and Computer Engineering | en_US |
| dc.degree.level | Master of Science (M.Sc.) | en_US |
| dc.description.abstract | A semiconductor based gas sensor was developed by integrating a gas sensitive polymer with a floating-gate metal-oxide-semiconductor (FGMOS). The integration of the gas sensitive polymer with a semiconductor device enables the design of a large sensor array in a single chip for electronic sensing application. A new FGMOS structure was designed to reduce the number of post-processing steps during electrochemical polymer deposition. In this new design, the top metal layer of a standard CMOS process was used as an extended sensor pad which was connected to the floating gate. A sensor chip was designed using a standard 0.35 µm CMOS process. A polymer film was selectively deposited on the top metal layer (sensor pad) of a FGMOS using two post processing steps. The sensor response was measured by exposing the sensor in different concentration of water and methanol vapor. A short pulse measurement technique was introduced to measure the sensor response which was not affected by the measurement parameters. | en_US |
| dc.description.note | May 2014 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1993/23437 | |
| dc.language.iso | eng | en_US |
| dc.rights | open access | en_US |
| dc.subject | Sensor | en_US |
| dc.subject | FGMOS | en_US |
| dc.subject | Polymer | en_US |
| dc.title | Floating Gate Metal-Oxide-Semiconductor Based Gas Sensor | en_US |
| dc.type | master thesis | en_US |