Passively mode-locked picosecond Nd:KGW laser with low quantum defect diode pumping

dc.contributor.authorEibna Halim, Md. Zubaer
dc.contributor.examiningcommitteeSherif, Sherif (Electrical and Computer Engineering) Ojo, Olanrewaju (Mechanical Engineering)en_US
dc.contributor.supervisorMajor, Arkady (Electrical and Computer Engineering)en_US
dc.date.accessioned2016-10-28T20:52:47Z
dc.date.available2016-10-28T20:52:47Z
dc.date.issued2016-09-02en_US
dc.date.issued2016-05-25en_US
dc.degree.disciplineElectrical and Computer Engineeringen_US
dc.degree.levelMaster of Science (M.Sc.)en_US
dc.description.abstractSolid-state lasers are capable of providing versatile output characteristics with greater flexibility compared to other popular laser systems. Lasing action has been achieved in many hundreds of solid-state media, but Nd-ion doped gain media are widely used to reach high power levels with short pulses. In this work, commercially available Nd:KGW crystal served as a gain medium to achieve pulsed operation at 1067 nm. This laser crystal offers large stimulated emission crosssection and gain bandwidth which facilitates generation of high peak power pulses in the picosecond regime. The KGW crystal is monoclinic and biaxial in structure, and anisotropic in its optical and thermal properties. Due to poor thermal conductivity, this crystal can be operated within a limited power range before crystal fracture takes place. To reduce the amount of heat deposited in the gain media, we introduced a new pumping wavelength of 910 nm which reduces the quantum defect by more than 45%. Continuous-wave laser operation was optimized to operate in mode-locked regime. In order to achieve short light pulses from the continuous-wave laser, one of the end mirrors was replaced by a semiconductor saturable absorber mirror (SESAM) to generate 2.4 ps pulses at a repetition rate of 83.8 MHz. An average output power of 87 mW was obtained at lasing wavelength of 1067 nm and the beam was nearly diffraction limited with M^2 < 1.18. The peak power of the generated pulses was 427 W and energy of each pulse was >1 nJ. Pumping the crystal at longer wavelength (910 nm) reduced the thermal lensing of the crystal by half when compared to conventional pumping at shorter wavelength (808 nm). To the best of our knowledge, this is the first time passive mode-locking of a Nd:KGW laser was explored using the pump wavelength at 910 nm.en_US
dc.description.noteFebruary 2017en_US
dc.identifier.citationHalim, M. E., Talukder, R. C., Waritanant, T., & Major, A. (2016). Passive mode locking of a Nd: KGW laser with hot-band diode pumping. Laser Physics Letters, 13(10), 105003.en_US
dc.identifier.citationM. Z. E. Halim, R. C. Talukder, T. Waritanant and A. Major, "Passive mode-locking of Nd:KGW laser with hot band diode pumping," 2016 Photonics North (PN), Quebec City, QC, 2016, pp. 1-1. doi: 10.1109/PN.2016.7537886en_US
dc.identifier.urihttp://hdl.handle.net/1993/31913
dc.language.isoengen_US
dc.publisherAstro Ltden_US
dc.publisherIEEEen_US
dc.rightsopen accessen_US
dc.subjectSolid-state laseren_US
dc.subjectUltra-fast opticsen_US
dc.subjectMode-locked laseren_US
dc.titlePassively mode-locked picosecond Nd:KGW laser with low quantum defect diode pumpingen_US
dc.typemaster thesisen_US
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