Investigation of defects in silicon by means of the positron annihilation technique

Simple item page
dc.contributor.authorAbdurahman, Khaleden_US
dc.date.accessioned2013-03-07T17:18:15Z
dc.date.available2013-03-07T17:18:15Z
dc.date.issued1992en_US
dc.degree.disciplinePhysicsen_US
dc.degree.levelMaster of Science (M.Sc.)en_US
dc.description.abstracten_US
dc.format.extentv, 86 leaves :en_US
dc.identifierocm00012185en_US
dc.identifier.urihttp://hdl.handle.net/1993/17437
dc.language.isoengen_US
dc.rightsopen accessen_US
dc.titleInvestigation of defects in silicon by means of the positron annihilation techniqueen_US
dc.typemaster thesisen_US
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Abdurahman_Investigation_of.pdf
Size:
4.28 MB
Format:
Adobe Portable Document Format
Description:
Download
Collections
FGS - Electronic Theses and Practica