Properties of fluorine-incorporated silicon oxide films and effects of photon radiation during PECVD

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dc.contributor.authorLam, Baldwin Pok Manen_US
dc.date.accessioned2013-04-12T21:09:33Z
dc.date.available2013-04-12T21:09:33Z
dc.date.issued1995en_US
dc.degree.disciplineElectrical and Computer Engineeringen_US
dc.degree.levelMaster of Science (M.Sc.)en_US
dc.description.abstracten_US
dc.format.extentx, 69 leaves :en_US
dc.identifier(Sirsi) AIE-4297en_US
dc.identifier.urihttp://hdl.handle.net/1993/18831
dc.language.isoengen_US
dc.rightsopen accessen_US
dc.titleProperties of fluorine-incorporated silicon oxide films and effects of photon radiation during PECVDen_US
dc.typemaster thesisen_US
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