The effects of temperature and radiation on current instabilities caused by recombination centers in semiconductors

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dc.contributor.authorElsharkawi, Abdelrahman R.en_US
dc.date.accessioned2013-01-30T19:48:01Z
dc.date.available2013-01-30T19:48:01Z
dc.date.issued1971en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.levelMaster of Science (M.Sc.)en_US
dc.description.abstracten_US
dc.format.extentviii, 81 p.en_US
dc.identifierocm72767317en_US
dc.identifier.urihttp://hdl.handle.net/1993/15913
dc.language.isoengen_US
dc.rightsopen accessen_US
dc.titleThe effects of temperature and radiation on current instabilities caused by recombination centers in semiconductorsen_US
dc.typemaster thesisen_US
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