A study of charges and defects in SiO2 films fabricated by plasma-enhanced chemical vapour deposition (PECVD) techniques

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dc.contributor.authorIp, Brian Kauen_US
dc.date.accessioned2013-03-04T22:15:38Z
dc.date.available2013-03-04T22:15:38Z
dc.date.issued1989en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.levelMaster of Science (M.Sc.)en_US
dc.description.abstracten_US
dc.format.extentii [i.e. vii], 93 leaves :en_US
dc.identifierocm72731768en_US
dc.identifier.urihttp://hdl.handle.net/1993/17053
dc.language.isoengen_US
dc.rightsopen accessen_US
dc.titleA study of charges and defects in SiO2 films fabricated by plasma-enhanced chemical vapour deposition (PECVD) techniquesen_US
dc.typemaster thesisen_US
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