A quantum-mechanical charge transport simulation methodology

dc.contributor.authorWiebe, Daniel
dc.contributor.examiningcommitteeArino, Julien (Mathematics); Oliver, Derek (Electrical and Computer Engineering)en_US
dc.contributor.supervisorBuchanan, Douglas (Electrical and Computer Engineering)en_US
dc.date.accessioned2012-04-11T16:11:14Z
dc.date.available2012-04-11T16:11:14Z
dc.date.issued2012-04-11
dc.degree.disciplineElectrical and Computer Engineeringen_US
dc.degree.levelMaster of Science (M.Sc.)en_US
dc.description.abstractA method was developed for finding charge and current distribution in nanoscale electronic devices such as MOS capacitors and resonant tunneling diodes. A system of differential equations, comprised of the Poisson and Schrödinger equations, was solved iteratively to find the electric field and charge distribution inside devices under simulation. The proposed solution method was based on the non-equilibrium Green’s function approach, but expands on that approach by using spatially varying quasi-Fermi levels to construct density operators. The proposed method was applied to several example device models. The simulation results are presented. Calculated charge distributions in FET transistors were found to have necessary features: for example, the results showed inversion layer formation. However, the calculated current-voltage curves differed significantly from published experimental results and other simulators. Other published methods for charge transport simulation are compared to the proposed method.en_US
dc.description.noteMay 2012en_US
dc.identifier.urihttp://hdl.handle.net/1993/5290
dc.language.isoengen_US
dc.rightsopen accessen_US
dc.subjectsimulationen_US
dc.subjecttransporten_US
dc.subjectnanodevicesen_US
dc.titleA quantum-mechanical charge transport simulation methodologyen_US
dc.typemaster thesisen_US
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