Abstract:
To harness the wealth of success and computational power from the microelectronics industry, lab-on-a-chip (LOAC) applications should be fully integrated with silicon platforms. This works demonstrates a dielectrophoresis-based LOAC device built entirely on silicon using standard CMOS (complementary metal oxide semiconductor) processing techniques. The signal phases on multiple electrodes were controlled with only four electrical contacts, which connected to the device using three metal layers separated with interlayer dielectric. Indium tin oxide was deposited on a milled plastic lid to provide the conductivity and optical clarity necessary to electrically actuate the particles and observe them. The particles and medium were in the microfluidic chamber formed by using conductive glue to bond the plastic milled lid to the patterned silicon substrate. A correlation between the particle velocities and the electric field gradients was made using video microscopy and COMSOL Multiphysics ® simulations.
