• Libraries
    • Log in to:
    View Item 
    •   MSpace Home
    • Faculty of Graduate Studies (Electronic Theses and Practica)
    • FGS - Electronic Theses and Practica
    • View Item
    •   MSpace Home
    • Faculty of Graduate Studies (Electronic Theses and Practica)
    • FGS - Electronic Theses and Practica
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    A chemical sensor design using a standard CMOS process

    Thumbnail
    View/Open
    draft10_April42007_FINAL_v2.pdf (4.029Mb)
    Date
    2007-04-10
    Author
    Cao, Kaijian (Jane)
    Metadata
    Show full item record
    Abstract
    By integrating an electrochemical deposition process and a silicon chip manufacturing process, a chemical sensor based on a floating gate field-effect transistor was developed. The sensor was fabricated using the standard 0.35μm CMOS process with minimal post-processing. A pH-sensitive organic polymer was electrochemically deposited on the “pseudo” floating gate extension. This “pseudo” floating gate extension was an external area connected to the floating gate of the testing device. By monitoring the change of the current-voltage characteristics during exposure to the gas phase of the chemical aqueous solution, the sensor was shown to be feasible with a reasonable sensitivity.
    URI
    http://hdl.handle.net/1993/322
    Collections
    • FGS - Electronic Theses and Practica [25494]

    DSpace software copyright © 2002-2016  DuraSpace
    Contact Us | Send Feedback
    Theme by 
    Atmire NV
     

     

    Browse

    All of MSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

    My Account

    Login

    Statistics

    View Usage Statistics

    DSpace software copyright © 2002-2016  DuraSpace
    Contact Us | Send Feedback
    Theme by 
    Atmire NV