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dc.contributor.supervisor Buchanan, Douglas A. (Electrical and Computer Engineering); Freund, Michael S. (Chemistry and adjunct of Electrical and Computer Engineering) en
dc.contributor.author Cao, Kaijian (Jane)
dc.date.accessioned 2007-04-10T15:31:31Z
dc.date.available 2007-04-10T15:31:31Z
dc.date.issued 2007-04-10T15:31:31Z
dc.identifier.uri http://hdl.handle.net/1993/322
dc.description.abstract By integrating an electrochemical deposition process and a silicon chip manufacturing process, a chemical sensor based on a floating gate field-effect transistor was developed. The sensor was fabricated using the standard 0.35μm CMOS process with minimal post-processing. A pH-sensitive organic polymer was electrochemically deposited on the “pseudo” floating gate extension. This “pseudo” floating gate extension was an external area connected to the floating gate of the testing device. By monitoring the change of the current-voltage characteristics during exposure to the gas phase of the chemical aqueous solution, the sensor was shown to be feasible with a reasonable sensitivity. en
dc.format.extent 4225546 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.rights info:eu-repo/semantics/openAccess
dc.subject post-processing en
dc.subject characteristics en
dc.title A chemical sensor design using a standard CMOS process en
dc.type info:eu-repo/semantics/masterThesis
dc.degree.discipline Electrical and Computer Engineering en
dc.contributor.examiningcommittee Shafai, Cyrus (Electrical and Computer Engineering); Hegmann, Torsten (Chemistry) en
dc.degree.level Master of Science (M.Sc.) en
dc.description.note May 2007 en


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