Show simple item record Tran, Thang Duc en_US 2007-07-12T17:48:23Z 2007-07-12T17:48:23Z 2001-05-01T00:00:00Z en_US
dc.description.abstract Here we present a technique, the Schottky Scanning Capacitance Microscopy (SSCM) developed by the University of Manitoba SPM lab, for measuring carrier profiles on semiconductor device cross-sections. SSCM utilizes a sharp conducting probe tip that is raster scanned in contact with the sample surface. As a result of the work function difference between the two materials, a space charge depletion region and therefore a capacitor is formed at the interface. By applying a small ac voltage, the voltage derivative of the contact capacitance can be measured with a capacitance sensor and a lock-in amplifier. These voltage derivative measurements are used to delineate regions of different doping levels and dopant type with high spatial resolution. In this thesis we also present experimental results obtained from imaging cross-sections of a wide variety of semiconductor devices. A newly designed capacitance sensor is presented. A conversion algorithm was written to convert the measured data to carrier concentration.(Abstract shortened by UMI.) en_US
dc.format.extent 11846853 bytes
dc.format.extent 184 bytes
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dc.language en en_US
dc.language.iso en_US
dc.rights info:eu-repo/semantics/openAccess
dc.title Development of a ZeptoFarad (10S-2[1] F) resolution capacitance sensor for scanning capacitance microscopy en_US
dc.type info:eu-repo/semantics/masterThesis
dc.type master thesis en_US Electrical and Computer Engineering en_US Master of Science (M.Sc.) en_US

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