Show simple item record

dc.contributor.author Tran, Thang Duc en_US
dc.date.accessioned 2007-07-12T17:48:23Z
dc.date.available 2007-07-12T17:48:23Z
dc.date.issued 2001-05-01T00:00:00Z en_US
dc.identifier.uri http://hdl.handle.net/1993/2539
dc.description.abstract Here we present a technique, the Schottky Scanning Capacitance Microscopy (SSCM) developed by the University of Manitoba SPM lab, for measuring carrier profiles on semiconductor device cross-sections. SSCM utilizes a sharp conducting probe tip that is raster scanned in contact with the sample surface. As a result of the work function difference between the two materials, a space charge depletion region and therefore a capacitor is formed at the interface. By applying a small ac voltage, the voltage derivative of the contact capacitance can be measured with a capacitance sensor and a lock-in amplifier. These voltage derivative measurements are used to delineate regions of different doping levels and dopant type with high spatial resolution. In this thesis we also present experimental results obtained from imaging cross-sections of a wide variety of semiconductor devices. A newly designed capacitance sensor is presented. A conversion algorithm was written to convert the measured data to carrier concentration.(Abstract shortened by UMI.) en_US
dc.format.extent 11846853 bytes
dc.format.extent 184 bytes
dc.format.mimetype application/pdf
dc.format.mimetype text/plain
dc.language en en_US
dc.language.iso en_US
dc.rights info:eu-repo/semantics/openAccess
dc.title Development of a ZeptoFarad (10S-2[1] F) resolution capacitance sensor for scanning capacitance microscopy en_US
dc.type info:eu-repo/semantics/masterThesis
dc.degree.discipline Electrical and Computer Engineering en_US
dc.degree.level Master of Science (M.Sc.) en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

View Statistics