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dc.contributor.author Li, Yong Qiang en_US
dc.date.accessioned 2013-03-04T20:51:16Z
dc.date.available 2013-03-04T20:51:16Z
dc.date.issued 1989 en_US
dc.identifier ocm72753217 en_US
dc.identifier.uri http://hdl.handle.net/1993/16891
dc.description.abstract en_US
dc.format.extent iii [i.e. xiv], 92 leaves : en_US
dc.language en en_US
dc.rights en_US
dc.title Investigation of the properties of plasma enhanced CVD silicon dioxide and its applications to VLSI technology en_US
dc.degree.discipline Electrical Engineering en_US


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