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dc.contributor.supervisor Oliver, Derek (Electrical and Computer Engineering) Freund, Michael (Chemistry) en_US
dc.contributor.author McClarty, Megan
dc.date.accessioned 2014-12-23T17:30:03Z
dc.date.available 2014-12-23T17:30:03Z
dc.date.issued 2014-12-23
dc.identifier.uri http://hdl.handle.net/1993/30143
dc.description.abstract As the world’s population increases, the demand for energy also grows. The strain on our limited resources of fossil fuels is unsustainable in the long term. An alternative, renewable method of energy generation must be implemented. Solar energy has good potential as an environmentally sound, unlimited energy source, but solar devices are not yet able to efficiently store energy for later use. A device has been proposed which uses direct sunlight to split water into hydrogen and oxygen. The hydrogen can then be harvested and stored as fuel, solving the question of how to effectively store energy generated during times of peak sunlight for use when sunlight levels are low. The prototype device incorporates arrays of doped silicon microwires which function as light absorbers and current-carriers, driving the chemical reactions that evolve hydrogen from water. This work aims to quantify and characterize the reduction in microwire resistivity that is achievable through application of silicon’s piezoresistive properties. Silicon displays a change in electrical resistance as a function of applied mechanical strain. This electromechanical effect has been studied extensively in bulk and top-down (etched) microstructures, but studies on microstructures grown bottom-up have been limited. A simple method is presented for piezoresistive characterization of individual, released, bottom-up silicon microwires. It is shown that these n-type microwires display a consistent negative piezoresistive response which increases in magnitude with increasing doping concentration. It was found that harnessing the piezoresistive response of moderately-doped (∼10^17 cm^−3) n-type wires allowed for a maximum observed reduction in resistivity of 49%, which translated to a 1% reduction in overall system resistance of a prototype unit cell of the artificial photosynthesis device, if all other components therein remained unchanged. en_US
dc.rights info:eu-repo/semantics/openAccess
dc.subject microwire en_US
dc.subject silicon en_US
dc.subject piezoresistance en_US
dc.subject piezoresistivity en_US
dc.subject artificial en_US
dc.subject photosynthesis en_US
dc.subject bending en_US
dc.subject strain en_US
dc.title An analysis of the piezoresistive response of n-type, bottom-up, functionalized silicon microwires en_US
dc.type info:eu-repo/semantics/masterThesis
dc.type master thesis en_US
dc.degree.discipline Electrical and Computer Engineering en_US
dc.contributor.examiningcommittee Buchanan, Douglas (Electrical and Computer) Hu, Can-Ming (Physics and Astronomy) en_US
dc.degree.level Master of Science (M.Sc.) en_US
dc.description.note February 2015 en_US


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