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Please use this identifier to cite or link to this item: http://hdl.handle.net/1993/5290

Title: A quantum-mechanical charge transport simulation methodology
Authors: Wiebe, Daniel
Supervisor: Buchanan, Douglas (Electrical and Computer Engineering)
Examining Committee: Arino, Julien (Mathematics); Oliver, Derek (Electrical and Computer Engineering)
Graduation Date: May 2012
Keywords: simulation
transport
nanodevices
Issue Date: 11-Apr-2012
Abstract: A method was developed for finding charge and current distribution in nanoscale electronic devices such as MOS capacitors and resonant tunneling diodes. A system of differential equations, comprised of the Poisson and Schrödinger equations, was solved iteratively to find the electric field and charge distribution inside devices under simulation. The proposed solution method was based on the non-equilibrium Green’s function approach, but expands on that approach by using spatially varying quasi-Fermi levels to construct density operators. The proposed method was applied to several example device models. The simulation results are presented. Calculated charge distributions in FET transistors were found to have necessary features: for example, the results showed inversion layer formation. However, the calculated current-voltage curves differed significantly from published experimental results and other simulators. Other published methods for charge transport simulation are compared to the proposed method.
URI: http://hdl.handle.net/1993/5290
Appears in Collection(s):FGS - Electronic Theses & Dissertations (Public)

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